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dc.contributor.authorChiou, BSen_US
dc.contributor.authorTsai, JHen_US
dc.date.accessioned2014-12-08T15:46:16Z-
dc.date.available2014-12-08T15:46:16Z-
dc.date.issued1999-09-01en_US
dc.identifier.issn0957-4522en_US
dc.identifier.urihttp://dx.doi.org/10.1023/A:1008924018328en_US
dc.identifier.urihttp://hdl.handle.net/11536/31126-
dc.description.abstractThe refractive index n of radio-frequency (r.f.) magnetron sputtered indium tin oxide (ITO) films varies with sputtering parameters, such as sputtering power and oxygen percentage in the sputtering ambient. In this study, the feasibility to fabricate multilayer antireflective (AR) coating with a single ITO target by controlling the sputtering conditions is explored. Reduction in the reflectance can be achieved by using a one-quarter-wavelength inner layer ITO with a refractive index n = 1.87 and a one-quarter-wavelength outer layer ITO with n = 2.17. Hence, a single ITO target suffices in the preparation of multilayer AR coating. This simplifies the deposition processes and equipment for the fabrication of AR coating. Surface corrugation, another approach to the reduction of reflectance, is also discussed.en_US
dc.language.isoen_USen_US
dc.titleAntireflective coating for ITO films deposited on glass substrateen_US
dc.typeArticleen_US
dc.identifier.doi10.1023/A:1008924018328en_US
dc.identifier.journalJOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICSen_US
dc.citation.volume10en_US
dc.citation.issue7en_US
dc.citation.spage491en_US
dc.citation.epage495en_US
dc.contributor.department電子工程學系及電子研究所zh_TW
dc.contributor.departmentDepartment of Electronics Engineering and Institute of Electronicsen_US
dc.identifier.wosnumberWOS:000082591700006-
dc.citation.woscount29-
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