完整後設資料紀錄
DC 欄位 | 值 | 語言 |
---|---|---|
dc.contributor.author | Shih, PS | en_US |
dc.contributor.author | Chang, CY | en_US |
dc.contributor.author | Chang, TC | en_US |
dc.contributor.author | Huang, TY | en_US |
dc.contributor.author | Peng, DZ | en_US |
dc.contributor.author | Yeh, CF | en_US |
dc.date.accessioned | 2014-12-08T15:46:20Z | - |
dc.date.available | 2014-12-08T15:46:20Z | - |
dc.date.issued | 1999-08-01 | en_US |
dc.identifier.issn | 0741-3106 | en_US |
dc.identifier.uri | http://dx.doi.org/10.1109/55.778164 | en_US |
dc.identifier.uri | http://hdl.handle.net/11536/31174 | - |
dc.description.abstract | We have proposed and successfully demonstrated a novel process for fabricating lightly doped drain (LDD) polycrystalline silicon thin-film transistors (TFT's), The oxide sidewall spacer in the new process is formed by a simple one-step selective liquid phase deposition (LPD) oxide performed at 23 degrees C, Devices fabricated with the new process exhibit a lower leakage current and a better ON/OFF current ratio than non-LDD control devices. Since the apparatus used for LPD oxide deposition is simple and inexpensive, the new process appears to be quite promising for future high-performance poly-Si TFT fabrication. | en_US |
dc.language.iso | en_US | en_US |
dc.title | A novel lightly doped drain polysilicon thin-film transistor with oxide sidewall spacer formed by one-step selective liquid phase deposition | en_US |
dc.type | Article | en_US |
dc.identifier.doi | 10.1109/55.778164 | en_US |
dc.identifier.journal | IEEE ELECTRON DEVICE LETTERS | en_US |
dc.citation.volume | 20 | en_US |
dc.citation.issue | 8 | en_US |
dc.citation.spage | 421 | en_US |
dc.citation.epage | 423 | en_US |
dc.contributor.department | 電子工程學系及電子研究所 | zh_TW |
dc.contributor.department | Department of Electronics Engineering and Institute of Electronics | en_US |
dc.identifier.wosnumber | WOS:000081791700014 | - |
dc.citation.woscount | 12 | - |
顯示於類別: | 期刊論文 |