標題: Effects of hydrogen on electrical and chemical properties of low-k hydrogen silsesquioxane as an intermetal dielectric for nonetchback processes
作者: Chang, TC
Liu, PT
Shih, FY
Sze, SM
電子工程學系及電子研究所
Department of Electronics Engineering and Institute of Electronics
公開日期: 1-Aug-1999
摘要: The hydrogen plasma and hydrogen ion implantation post-treatments are applied for the first time to low-k hydrogen silsesquioxane (HSQ). These two post-treatments can efficiently abate the poisoned via problem of HSQ as an intermetal dielectric for nonetchback process. Both via resistance and dielectric constant are reduced using the hydrogen post-treatments. We propose that the role of hydrogen is to passivate the dangling bonds in the porous HSQ film and to prevent HSQ from moisture uptake and O-2 plasma attack during the nonetchback integrated process. (C) 1999 The Electrochemical Society. S1099-0062(99)03-022-9. All rights reserved.
URI: http://dx.doi.org/10.1149/1.1390847
http://hdl.handle.net/11536/31178
ISSN: 1099-0062
DOI: 10.1149/1.1390847
期刊: ELECTROCHEMICAL AND SOLID STATE LETTERS
Volume: 2
Issue: 8
起始頁: 390
結束頁: 392
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