Effects of hydrogen on electrical and chemical properties of low-k hydrogen silsesquioxane as an intermetal dielectric for nonetchback processes

Abstract

The hydrogen plasma and hydrogen ion implantation post-treatments are applied for the first time to low-k hydrogen silsesquioxane (HSQ). These two post-treatments can efficiently abate the poisoned via problem of HSQ as an intermetal dielectric for nonetchback process. Both via resistance and dielectric constant are reduced using the hydrogen post-treatments. We propose that the role of hydrogen is to passivate the dangling bonds in the porous HSQ film and to prevent HSQ from moisture uptake and O-2 plasma attack during the nonetchback integrated process. (C) 1999 The Electrochemical Society. S1099-0062(99)03-022-9. All rights reserved.