A dopant-related defect in Te-doped AlInP

完整後設資料紀錄

DC 欄位	值	語言
dc.contributor.author	Wu, YR	en_US
dc.contributor.author	Sung, WJ	en_US
dc.contributor.author	Wen, TC	en_US
dc.contributor.author	Lee, SC	en_US
dc.contributor.author	Lee, WI	en_US
dc.date.accessioned	2014-12-08T15:46:21Z	-
dc.date.available	2014-12-08T15:46:21Z	-
dc.date.issued	1999-08-01	en_US
dc.identifier.issn	0021-4922	en_US
dc.identifier.uri	http://hdl.handle.net/11536/31191	-
dc.description.abstract	A deep level in Te-doped Al0.5In0.5P, grown by metal organic chemical vapor deposition, has been studied by deep level transient spectroscopy. The thermal activation energy was 0.24 eV, and the trap concentration was related to Te-dopant concentration. The deep level concentration strongly increased with elevating Te-dopant concentration. Meanwhile, the trap distribution profile also presented the same distribution behavior as the Te concentration profile. Therefore, the deep level in Te-doped AlInP is verified to be a dopant-related defect.	en_US
dc.language.iso	en_US	en_US
dc.subject	Te	en_US
dc.subject	AlInP	en_US
dc.subject	dopant	en_US
dc.subject	defect	en_US
dc.subject	deep level	en_US
dc.subject	DLTS	en_US
dc.subject	depth profile measurement	en_US
dc.title	A dopant-related defect in Te-doped AlInP	en_US
dc.type	Article	en_US
dc.identifier.journal	JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS	en_US
dc.citation.volume	38	en_US
dc.citation.issue	8	en_US
dc.citation.spage	4720	en_US
dc.citation.epage	4721	en_US
dc.contributor.department	電子物理學系	zh_TW
dc.contributor.department	友訊交大聯合研發中心	zh_TW
dc.contributor.department	Department of Electrophysics	en_US
dc.contributor.department	D Link NCTU Joint Res Ctr	en_US
dc.identifier.wosnumber	WOS:000083181600019	-
dc.citation.woscount	5	-
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