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dc.contributor.authorWu, YRen_US
dc.contributor.authorSung, WJen_US
dc.contributor.authorWen, TCen_US
dc.contributor.authorLee, SCen_US
dc.contributor.authorLee, WIen_US
dc.date.accessioned2014-12-08T15:46:21Z-
dc.date.available2014-12-08T15:46:21Z-
dc.date.issued1999-08-01en_US
dc.identifier.issn0021-4922en_US
dc.identifier.urihttp://hdl.handle.net/11536/31191-
dc.description.abstractA deep level in Te-doped Al0.5In0.5P, grown by metal organic chemical vapor deposition, has been studied by deep level transient spectroscopy. The thermal activation energy was 0.24 eV, and the trap concentration was related to Te-dopant concentration. The deep level concentration strongly increased with elevating Te-dopant concentration. Meanwhile, the trap distribution profile also presented the same distribution behavior as the Te concentration profile. Therefore, the deep level in Te-doped AlInP is verified to be a dopant-related defect.en_US
dc.language.isoen_USen_US
dc.subjectTeen_US
dc.subjectAlInPen_US
dc.subjectdopanten_US
dc.subjectdefecten_US
dc.subjectdeep levelen_US
dc.subjectDLTSen_US
dc.subjectdepth profile measurementen_US
dc.titleA dopant-related defect in Te-doped AlInPen_US
dc.typeArticleen_US
dc.identifier.journalJAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERSen_US
dc.citation.volume38en_US
dc.citation.issue8en_US
dc.citation.spage4720en_US
dc.citation.epage4721en_US
dc.contributor.department電子物理學系zh_TW
dc.contributor.department友訊交大聯合研發中心zh_TW
dc.contributor.departmentDepartment of Electrophysicsen_US
dc.contributor.departmentD Link NCTU Joint Res Ctren_US
dc.identifier.wosnumberWOS:000083181600019-
dc.citation.woscount5-
Appears in Collections:Articles


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