Electrical properties of multiple high-dose Si implantation in p-GaN

Abstract

This work performs Si ion implantation the electrical conductive type of the p-GaN film from p-type to n-type. Multiple implantation method is also used to form a uniform Si implanted region in the p-type GaN epitaxial layer. Implant energies for the multiple implantation are 40, 100, and 200 KeV. The implant dose is 5 x 10(15) cm(-2) for each implant energy. After implantation, the samples are annealed in a N-2 ambient for different annealing temperatures and annealing times. The activation efficiency reaches as high as 20% when annealing the sample at 1000 degrees C. The carrier activation energy is about 720 meV. The low activation energy indicates that the hopping process mechanism is the dominant mechanism for the activation of the Si implantation in p-GaN. Moreover, the rectifying I-V characteristic of the p-n GaN diode is also examined.