標題: The CVD growth of Cu films using H-2 as carrier gas
作者: Lin, PJ
Chen, MC
電子工程學系及電子研究所
Department of Electronics Engineering and Institute of Electronics
關鍵字: chemical vapor deposition (CVD);Cu films;H-2 as carrier gas;resistivity
公開日期: 1-May-1999
摘要: Copper chemical vapor deposition from Cu(hexafluoroacetylacetonate)trimethyl-vinylsilane (Cu(hfac)TMVS) was studied using a low pressure chemical vapor deposition system of a cold wall vertical reactor. The Cu films deposited using H-2 as a carrier gas revealed no impurities in the films within the detection limits of Auger electron spectroscopy and x-ray photoelectron spectroscopy. Using hydrogen as a carrier gas, the hydrogen not only acts as a reducing agent, but also reacts with the residual fragment of precursor. As a result, using H-2 as a carrier gas for Cu(hfac)TMVS resulted in Cu films of lower resistivity, denser microstructure and faster deposition rate than using Ar or N-2 as the carrier gas. Moreover, we found that N-2 plasma treatment on the substrate surface prior to Cu deposition increased the deposition rate of Cu films.
URI: http://hdl.handle.net/11536/31360
ISSN: 0361-5235
期刊: JOURNAL OF ELECTRONIC MATERIALS
Volume: 28
Issue: 5
起始頁: 567
結束頁: 571
Appears in Collections:Conferences Paper


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