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dc.contributor.authorLin, PJen_US
dc.contributor.authorChen, MCen_US
dc.date.accessioned2014-12-08T15:46:38Z-
dc.date.available2014-12-08T15:46:38Z-
dc.date.issued1999-05-01en_US
dc.identifier.issn0361-5235en_US
dc.identifier.urihttp://hdl.handle.net/11536/31360-
dc.description.abstractCopper chemical vapor deposition from Cu(hexafluoroacetylacetonate)trimethyl-vinylsilane (Cu(hfac)TMVS) was studied using a low pressure chemical vapor deposition system of a cold wall vertical reactor. The Cu films deposited using H-2 as a carrier gas revealed no impurities in the films within the detection limits of Auger electron spectroscopy and x-ray photoelectron spectroscopy. Using hydrogen as a carrier gas, the hydrogen not only acts as a reducing agent, but also reacts with the residual fragment of precursor. As a result, using H-2 as a carrier gas for Cu(hfac)TMVS resulted in Cu films of lower resistivity, denser microstructure and faster deposition rate than using Ar or N-2 as the carrier gas. Moreover, we found that N-2 plasma treatment on the substrate surface prior to Cu deposition increased the deposition rate of Cu films.en_US
dc.language.isoen_USen_US
dc.subjectchemical vapor deposition (CVD)en_US
dc.subjectCu filmsen_US
dc.subjectH-2 as carrier gasen_US
dc.subjectresistivityen_US
dc.titleThe CVD growth of Cu films using H-2 as carrier gasen_US
dc.typeArticle; Proceedings Paperen_US
dc.identifier.journalJOURNAL OF ELECTRONIC MATERIALSen_US
dc.citation.volume28en_US
dc.citation.issue5en_US
dc.citation.spage567en_US
dc.citation.epage571en_US
dc.contributor.department電子工程學系及電子研究所zh_TW
dc.contributor.departmentDepartment of Electronics Engineering and Institute of Electronicsen_US
dc.identifier.wosnumberWOS:000080269700029-
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