標題: Properties of sputtered Cr-O and reactively sputtered Cr-N-O as passivation layers against copper oxidation
作者: Chuang, JC
Chen, MC
電子工程學系及電子研究所
Department of Electronics Engineering and Institute of Electronics
公開日期: 1-十一月-1998
摘要: Passivation layers of 200 Angstrom sputtered Cr-O as well as reactive sputtered Cr-N-O were studied with respect to the passivation capability against thermal oxidation of Cu in flowing nitrogen and flowing oxygen ambients. In a flowing N-2 ambient, both Cr-O and Cr-N-O passivation layers were able to prohibit oxidation of Cu at temperatures up to 700 degrees C. In an O-2 ambient, the passivation capability of Cr-N-O layer was found to be 500 degrees C, which is 150 degrees C higher than that of Cr-O layer. The superiority of the passivation capability of the Cr-N-O layer is presumably due to decoration of the surface defects and grain boundaries with nitrogen, which provide fast paths for oxygen and copper diffusion. (C) 1998 American Vacuum Society. [S0734-211X(98)11706-7].
URI: http://hdl.handle.net/11536/31806
ISSN: 1071-1023
期刊: JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B
Volume: 16
Issue: 6
起始頁: 3021
結束頁: 3026
顯示於類別:期刊論文


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