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dc.contributor.authorLai, CSen_US
dc.contributor.authorChao, TSen_US
dc.contributor.authorLei, TFen_US
dc.contributor.authorLee, CLen_US
dc.contributor.authorHuang, TYen_US
dc.contributor.authorChang, CYen_US
dc.date.accessioned2014-12-08T15:47:36Z-
dc.date.available2014-12-08T15:47:36Z-
dc.date.issued1998-10-01en_US
dc.identifier.issn0021-4922en_US
dc.identifier.urihttp://hdl.handle.net/11536/31859-
dc.description.abstractA systematic study of the impact of the reliability of metal-oxide semiconductor field-effect transistors (MOSFETs) with N2O nitrided gate oxides and N2O poly-reoxidation was conducted. The improvements include hot carrier immunity, suppression of reverse short channel effect and suppression of plasma-induced degradation. These improvements are due to nitrogen incorporation at the oxide/Si-substrate interface. All data presented in this study involve substantially low thermal budget (850 degrees C), making this N2O-related technology extremely attractive and promising for future scaled devices.en_US
dc.language.isoen_USen_US
dc.subjectN2Oen_US
dc.subjectpolysilicon gate reoxidationen_US
dc.subjectreverse short channel effecten_US
dc.subjectantenna effecten_US
dc.titleImprovement of reliability of metal-oxide semiconductor field-effect transistors with N2O nitrided gate oxide and N2O polysilicon gate reoxidationen_US
dc.typeArticleen_US
dc.identifier.journalJAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERSen_US
dc.citation.volume37en_US
dc.citation.issue10en_US
dc.citation.spage5507en_US
dc.citation.epage5509en_US
dc.contributor.department電子工程學系及電子研究所zh_TW
dc.contributor.departmentDepartment of Electronics Engineering and Institute of Electronicsen_US
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