標題: Poly-Si Nanowire Nonvolatile Memory With Nanocrystal Indium-Gallium-Zinc-Oxide Charge-Trapping Layer
作者: Chen, Lun-Chun
Wu, Yung-Chun
Lin, Tien-Chun
Huang, Jyun-Yang
Hung, Min-Feng
Chen, Jiang-Hung
Chang, Chun-Yen
電子工程學系及電子研究所
Department of Electronics Engineering and Institute of Electronics
關鍵字: Indium gallium zinc oxide (IGZO);nanocrystal (NC);nonvolatile memory (NVM);thin-film transistor (TFT)
公開日期: 1-十二月-2010
摘要: This letter introduces a polycrystalline silicon (poly-Si) thin-film nonvolatile memory (NVM) with a nanocrystal (NC) indium-gallium-zinc-oxide (IGZO) charge-trapping layer. Experimental results indicate that this NVM exhibits high and symmetric program/erase speeds through the Fowler-Nordheim tunneling mechanism. The memory window loss of the NVM with NC IGZO charge-trapping layer is 25% after 10(4) s at 85 degrees C due to deep quantum well, as well as high-density and deep trap sites in NC IGZO charge-trapping layer. Accordingly, a poly-Si thin-film transistor with NC IGZO charge-trapping layer is promising for NVM applications.
URI: http://dx.doi.org/10.1109/LED.2010.2076271
http://hdl.handle.net/11536/31878
ISSN: 0741-3106
DOI: 10.1109/LED.2010.2076271
期刊: IEEE ELECTRON DEVICE LETTERS
Volume: 31
Issue: 12
起始頁: 1407
結束頁: 1409
顯示於類別:期刊論文


文件中的檔案:

  1. 000284541400017.pdf

若為 zip 檔案,請下載檔案解壓縮後,用瀏覽器開啟資料夾中的 index.html 瀏覽全文。