標題: | Poly-Si Nanowire Nonvolatile Memory With Nanocrystal Indium-Gallium-Zinc-Oxide Charge-Trapping Layer |
作者: | Chen, Lun-Chun Wu, Yung-Chun Lin, Tien-Chun Huang, Jyun-Yang Hung, Min-Feng Chen, Jiang-Hung Chang, Chun-Yen 電子工程學系及電子研究所 Department of Electronics Engineering and Institute of Electronics |
關鍵字: | Indium gallium zinc oxide (IGZO);nanocrystal (NC);nonvolatile memory (NVM);thin-film transistor (TFT) |
公開日期: | 1-十二月-2010 |
摘要: | This letter introduces a polycrystalline silicon (poly-Si) thin-film nonvolatile memory (NVM) with a nanocrystal (NC) indium-gallium-zinc-oxide (IGZO) charge-trapping layer. Experimental results indicate that this NVM exhibits high and symmetric program/erase speeds through the Fowler-Nordheim tunneling mechanism. The memory window loss of the NVM with NC IGZO charge-trapping layer is 25% after 10(4) s at 85 degrees C due to deep quantum well, as well as high-density and deep trap sites in NC IGZO charge-trapping layer. Accordingly, a poly-Si thin-film transistor with NC IGZO charge-trapping layer is promising for NVM applications. |
URI: | http://dx.doi.org/10.1109/LED.2010.2076271 http://hdl.handle.net/11536/31878 |
ISSN: | 0741-3106 |
DOI: | 10.1109/LED.2010.2076271 |
期刊: | IEEE ELECTRON DEVICE LETTERS |
Volume: | 31 |
Issue: | 12 |
起始頁: | 1407 |
結束頁: | 1409 |
顯示於類別: | 期刊論文 |