FIELD INVERSION GENERATED IN THE CMOS DOUBLE-METAL PROCESS DUE TO PETEOS AND SOG INTERACTIONS

doi:10.1109/16.249423

完整後設資料紀錄

DC 欄位	值	語言
dc.contributor.author	HSU, SL	en_US
dc.contributor.author	LIU, LM	en_US
dc.contributor.author	FANG, CH	en_US
dc.contributor.author	YING, SL	en_US
dc.contributor.author	CHEN, TL	en_US
dc.contributor.author	LIN, MS	en_US
dc.contributor.author	CHANG, CY	en_US
dc.date.accessioned	2014-12-08T15:04:41Z	-
dc.date.available	2014-12-08T15:04:41Z	-
dc.date.issued	1993-01-01	en_US
dc.identifier.issn	0018-9383	en_US
dc.identifier.uri	http://dx.doi.org/10.1109/16.249423	en_US
dc.identifier.uri	http://hdl.handle.net/11536/3187	-
dc.description.abstract	Severe field inversion has been observed in the circuits fabricated by the CMOS double metal process using PETEOS/inorganic SOG/PEOX as the inter-metal dielectrics and PEOX/PECVD nitride as the passivation layer. We have performed detailed studies to conclude that the field inversion is caused by the interaction between PETEOS and non-carbon-based SOG, triggered by the H+ released from PECVD nitride during the sintering. No field inversion is observed when PEOX/inorganic SOG/PEOX is used as the inter-metal dielectrics. The effect of field inversion on the circuit yield is also discussed.	en_US
dc.language.iso	en_US	en_US
dc.title	FIELD INVERSION GENERATED IN THE CMOS DOUBLE-METAL PROCESS DUE TO PETEOS AND SOG INTERACTIONS	en_US
dc.type	Article	en_US
dc.identifier.doi	10.1109/16.249423	en_US
dc.identifier.journal	IEEE TRANSACTIONS ON ELECTRON DEVICES	en_US
dc.citation.volume	40	en_US
dc.citation.issue	1	en_US
dc.citation.spage	49	en_US
dc.citation.epage	53	en_US
dc.contributor.department	電子工程學系及電子研究所	zh_TW
dc.contributor.department	Department of Electronics Engineering and Institute of Electronics	en_US
dc.identifier.wosnumber	WOS:A1993KC14400008	-
dc.citation.woscount	9	-
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