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dc.contributor.authorHsieh, Chih-Renen_US
dc.contributor.authorChen, Yung-Yuen_US
dc.contributor.authorLu, Kwung-Wenen_US
dc.contributor.authorLin, Grayen_US
dc.contributor.authorLou, Jen-Chungen_US
dc.date.accessioned2014-12-08T15:47:38Z-
dc.date.available2014-12-08T15:47:38Z-
dc.date.issued2010-12-01en_US
dc.identifier.issn0741-3106en_US
dc.identifier.urihttp://dx.doi.org/10.1109/LED.2010.2074181en_US
dc.identifier.urihttp://hdl.handle.net/11536/31881-
dc.description.abstractIn this letter, the reliabilities and insulating characteristics of the fluorinated aluminum oxide (Al(2)O(3)) and hafnium oxide (HfO(2)) inter-poly dielectric (IPD) are studied for the first time. Compared with the IPDs without fluorine incorporation, the results clearly indicate that fluorine incorporation process is effective to improve the insulating characteristics of both the Al(2)O(3) and HfO(2) IPDs, mainly ascribed to the trap density reduction and the smooth interface. Although HfO(2) possesses higher dielectric constant to increase the gate coupling ratio, the results apparently indicate that the fluorine incorporation process is more effective to improve the dielectric characteristics of the Al(2)O(3) IPD than the HfO(2) IPD.en_US
dc.language.isoen_USen_US
dc.subjectAl(2)O(3)en_US
dc.subjectfluorineen_US
dc.subjectHfO(2)en_US
dc.titleCharacteristics of the Fluorinated High-k Inter-Poly Dielectricsen_US
dc.typeArticleen_US
dc.identifier.doi10.1109/LED.2010.2074181en_US
dc.identifier.journalIEEE ELECTRON DEVICE LETTERSen_US
dc.citation.volume31en_US
dc.citation.issue12en_US
dc.citation.spage1446en_US
dc.citation.epage1448en_US
dc.contributor.department電機工程學系zh_TW
dc.contributor.departmentDepartment of Electrical and Computer Engineeringen_US
dc.identifier.wosnumberWOS:000284541400030-
dc.citation.woscount5-
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