標題: A Tight Binding Method Study of Optimized Si-SiO(2) System
作者: Watanabe, Hiroshi
Kawabata, Kenji
Ichikawa, Takashi
電子工程學系及電子研究所
友訊交大聯合研發中心
Department of Electronics Engineering and Institute of Electronics
D Link NCTU Joint Res Ctr
公開日期: 1-Nov-2010
摘要: A mixed method of molecular dynamics and tight binding is applied to a Si-cluster surrounded by SiO(2) in order to study an influence of interfacial states on the band structure of the Si cluster. As a result, it is found that intrinsic interfacial states invade the band gaps of Si and SiO(2) from the conduction band, which may suggest that the Si dot surrounded by SiO(2) sounds metallic due to the interfacial states. This feature occurs while the size of the Si dot is less than at least 4 nm.
URI: http://dx.doi.org/10.1109/TED.2010.2071150
http://hdl.handle.net/11536/31992
ISSN: 0018-9383
DOI: 10.1109/TED.2010.2071150
期刊: IEEE TRANSACTIONS ON ELECTRON DEVICES
Volume: 57
Issue: 11
起始頁: 3084
結束頁: 3091
Appears in Collections:Articles