標題: Gate-First TaN/La(2)O(3)/SiO(2)/Ge n-MOSFETs Using Laser Annealing
作者: Chen, W. B.
Wu, C. H.
Shie, B. S.
Chin, Albert
電子工程學系及電子研究所
Department of Electronics Engineering and Institute of Electronics
公開日期: 1-十一月-2010
摘要: To improve device performance, laser annealing was applied to Ge n-MOSFETs, which gave a low sheet resistance of 68 Omega/sq, a small ideality factor of 1.3, and a large similar to 10(5) forward everse current in the source-drain n(+)/p junction. The laser-annealed gate-first TaN/La(2)O(3)/SiO(2)/Ge n-MOSFETs showed a high mobility of 603 cm(2)/Vs and a good mobility of 304 cm(2)/Vs at a 1.9-nm equivalent oxide thickness.
URI: http://dx.doi.org/10.1109/LED.2010.2063692
http://hdl.handle.net/11536/32029
ISSN: 0741-3106
DOI: 10.1109/LED.2010.2063692
期刊: IEEE ELECTRON DEVICE LETTERS
Volume: 31
Issue: 11
起始頁: 1184
結束頁: 1186
顯示於類別:期刊論文