Gate-First TaN/La(2)O(3)/SiO(2)/Ge n-MOSFETs Using Laser Annealing

Abstract

To improve device performance, laser annealing was applied to Ge n-MOSFETs, which gave a low sheet resistance of 68 Omega/sq, a small ideality factor of 1.3, and a large similar to 10(5) forward everse current in the source-drain n(+)/p junction. The laser-annealed gate-first TaN/La(2)O(3)/SiO(2)/Ge n-MOSFETs showed a high mobility of 603 cm(2)/Vs and a good mobility of 304 cm(2)/Vs at a 1.9-nm equivalent oxide thickness.