1. 目前位置：

完整後設資料紀錄
DC 欄位值語言
dc.contributor.authorWang, Bau-Mingen_US
dc.contributor.authorYang, Tzu-Mingen_US
dc.contributor.authorWu, YewChung Sermonen_US
dc.contributor.authorSu, Chun-Jungen_US
dc.contributor.authorLin, Horng-Chihen_US
dc.date.accessioned2014-12-08T15:48:03Z-
dc.date.available2014-12-08T15:48:03Z-
dc.date.issued2010-11-01en_US
dc.identifier.issn0254-0584en_US
dc.identifier.urihttp://dx.doi.org/10.1016/j.matchemphys.2010.08.018en_US
dc.identifier.urihttp://hdl.handle.net/11536/32043-
dc.description.abstractHigh performance nickel-induced lateral crystallization (NILC) polycrystalline silicon (poly-Si) nanowire (NW) thin-film transistors (TFTs) were fabricated. The phosphorous-doped amorphous silicon (alpha-Si)/chem-SiO(2) films were employed as Ni-gettering layers to investigate effect of Ni residues on the performance and the uniformity of NILC poly-Si NW TFTs. It was found that the performance and the uniformity of NW TFTs were greatly improved after Ni-gettering process. (C) 2010 Elsevier B.V. All rights reserved.en_US
dc.language.isoen_USen_US
dc.subjectNickel-metal induced lateral crystallization (NILC)en_US
dc.subjectNanowire (NW)en_US
dc.subjectNi-getteringen_US
dc.subjectThin-film transistor (TFT)en_US
dc.titleEffect of Ni residues on the performance and the uniformity of nickel-induced lateral crystallization polycrystalline silicon nanowire thin-film transistorsen_US
dc.typeArticleen_US
dc.identifier.doi10.1016/j.matchemphys.2010.08.018en_US
dc.identifier.journalMATERIALS CHEMISTRY AND PHYSICSen_US
dc.citation.volume124en_US
dc.citation.issue1en_US
dc.citation.spage880en_US
dc.citation.epage883en_US
dc.contributor.department材料科學與工程學系zh_TW
dc.contributor.department電子工程學系及電子研究所zh_TW
dc.contributor.departmentDepartment of Materials Science and Engineeringen_US
dc.contributor.departmentDepartment of Electronics Engineering and Institute of Electronicsen_US
顯示於類別：期刊論文


文件中的檔案：

  1. 000282607900156.pdf

若為 zip 檔案，請下載檔案解壓縮後，用瀏覽器開啟資料夾中的 index.html 瀏覽全文。

相關內容
Loading...