標題: Growth and optical properties of high-density InN nanodots
作者: Ke, W. C.
Lee, S. J.
Kao, C. Y.
Chen, W. K.
Chou, W. C.
Lee, M. C.
Chang, W. H.
Lin, W. J.
Cheng, Y. C.
Lee, T. C.
Lin, J. C.
電子物理學系
Department of Electrophysics
關鍵字: Nanostructures;Metal-organic chemical vapor deposition;InN;Semiconducting indium compounds
公開日期: 15-Oct-2010
摘要: High density InN/GaN nanodots were grown by pulsed mode (PM) metal-organic chemical vapor deposition (MOCVD). InN nanodots density of up to similar to 5 x 10(10) cm(-2) at a growth temperature of 550 degrees C was achieved. The high diffusion activation energy of 2.65 eV due to high NH(3) flow rate generated more reactive nitrogen adatoms on the growth surface, and is believed to be the main reason for the growth of high density InN nanodots. In addition, an anomalous temperature dependence of the PL peak energy was observed for high density InN nanodots. The high carrier concentration, due to high In vacancy (V(ln)) in the InN nanodots, thermally agitated to the conduction band. As the measurement temperature increased, the increase of Fermi energy resulted in blue-shifted PL peak energy. From the Arrhenius plot of integrated PL intensity, the thermal activation energy for the PM grown InN nanodots was estimated to be E(a)similar to 51 meV, indicating strong localization of carriers in the high density InN nanodots. (C) 2010 Elsevier B.V. All rights reserved.
URI: http://dx.doi.org/10.1016/j.jcrysgro.2010.07.044
http://hdl.handle.net/11536/32068
ISSN: 0022-0248
DOI: 10.1016/j.jcrysgro.2010.07.044
期刊: JOURNAL OF CRYSTAL GROWTH
Volume: 312
Issue: 21
起始頁: 3209
結束頁: 3213
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