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dc.contributor.authorLee, Huang-Mingen_US
dc.contributor.authorSahoo, Kartika Chandraen_US
dc.contributor.authorLi, Yimingen_US
dc.contributor.authorWu, Jong-Chingen_US
dc.contributor.authorChang, Edward Yien_US
dc.date.accessioned2014-12-08T15:48:10Z-
dc.date.available2014-12-08T15:48:10Z-
dc.date.issued2010-10-01en_US
dc.identifier.issn0040-6090en_US
dc.identifier.urihttp://dx.doi.org/10.1016/j.tsf.2010.04.078en_US
dc.identifier.urihttp://hdl.handle.net/11536/32113-
dc.description.abstractWe numerically calculate the spectral reflectivity of the silicon nitride (Si(3)N(4)) sub-wavelength structure (SWS) using a two-dimensional finite element simulation. The geometry-dependent effective reflectance of the Si(3)N(4) SWS over the wavelength ranging from 400 nm to 1000 nm is examined and the structure of Si(3)N(4) SWS is further optimized for the lowest effective reflectance. A p-n junction solar cell efficiency based on the optimized Si(3)N(4) SWS is also calculated, resulting in an improvement of 0.98% in efficiency than that of single layer antireflection coatings. (C) 2010 Elsevier B.V. All rights reserved.en_US
dc.language.isoen_USen_US
dc.subjectSilicon nitrideen_US
dc.subjectSub-wavelength structureen_US
dc.subjectFinite element simulationen_US
dc.subjectAntireflection coatingen_US
dc.subjectSolar cellen_US
dc.titleFinite element analysis of antireflective silicon nitride sub-wavelength structures for solar cell applicationsen_US
dc.typeArticleen_US
dc.identifier.doi10.1016/j.tsf.2010.04.078en_US
dc.identifier.journalTHIN SOLID FILMSen_US
dc.citation.volume518en_US
dc.citation.issue24en_US
dc.citation.spage7204en_US
dc.citation.epage7208en_US
dc.contributor.department材料科學與工程學系zh_TW
dc.contributor.department電機工程學系zh_TW
dc.contributor.departmentDepartment of Materials Science and Engineeringen_US
dc.contributor.departmentDepartment of Electrical and Computer Engineeringen_US
dc.identifier.wosnumberWOS:000282915100006-
dc.citation.woscount4-
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