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dc.contributor.authorLai, Chun-Hungen_US
dc.contributor.authorChang, Chia-Weien_US
dc.contributor.authorTseng, Tseung-Yuenen_US
dc.date.accessioned2014-12-08T15:48:10Z-
dc.date.available2014-12-08T15:48:10Z-
dc.date.issued2010-10-01en_US
dc.identifier.issn0040-6090en_US
dc.identifier.urihttp://dx.doi.org/10.1016/j.tsf.2010.04.091en_US
dc.identifier.urihttp://hdl.handle.net/11536/32116-
dc.description.abstractThe field-emission electrical properties of hydrothermally synthesized zinc-oxide nanowires grown on SiO(2)-Si substrate are reported. Vertically aligned single-crystalline emitters with distinct length L and diameter D are realized by controlling the assisted growth of porous anodic aluminum oxide (AAO) templates. Field-emission measurement revealed that these field emitters exhibited controllable turn-on field E(to) and the field enhancement factor beta. Sample with feature size of L = 500 nm and D = 80 nm was prepared and then used as a basis for examining the size effect. Lower E(to) and higher beta were observed consistently for increasing the aspect ratio LID. The enhanced properties of E(to) = 1.48 V/mu m and beta up to 6100 are achieved for L/D = 53 (L = 1600 nm and D = 30 nm). Optimal characterizing parameters of E(to) and beta will be reached while pursuing extreme L/D practically. Factors such as the geometric limit of AAO template manufacture and the filling efficiency of ZnO into AAO pores will exert influence on the size-dependent effect. (C) 2010 Elsevier B.V. All rights reserved.en_US
dc.language.isoen_USen_US
dc.subjectField-emissionen_US
dc.subjectHydrothermalen_US
dc.subjectTemplateen_US
dc.subjectField enhancement factoren_US
dc.titleSize-dependent field-emission characteristics of ZnO nanowires grown by porous anodic aluminum oxide templates assistanceen_US
dc.typeArticleen_US
dc.identifier.doi10.1016/j.tsf.2010.04.091en_US
dc.identifier.journalTHIN SOLID FILMSen_US
dc.citation.volume518en_US
dc.citation.issue24en_US
dc.citation.spage7283en_US
dc.citation.epage7286en_US
dc.contributor.department電子工程學系及電子研究所zh_TW
dc.contributor.departmentDepartment of Electronics Engineering and Institute of Electronicsen_US
dc.identifier.wosnumberWOS:000282915100025-
dc.citation.woscount3-
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