完整後設資料紀錄
DC 欄位 | 值 | 語言 |
---|---|---|
dc.contributor.author | Lai, Chun-Hung | en_US |
dc.contributor.author | Chang, Chia-Wei | en_US |
dc.contributor.author | Tseng, Tseung-Yuen | en_US |
dc.date.accessioned | 2014-12-08T15:48:10Z | - |
dc.date.available | 2014-12-08T15:48:10Z | - |
dc.date.issued | 2010-10-01 | en_US |
dc.identifier.issn | 0040-6090 | en_US |
dc.identifier.uri | http://dx.doi.org/10.1016/j.tsf.2010.04.091 | en_US |
dc.identifier.uri | http://hdl.handle.net/11536/32116 | - |
dc.description.abstract | The field-emission electrical properties of hydrothermally synthesized zinc-oxide nanowires grown on SiO(2)-Si substrate are reported. Vertically aligned single-crystalline emitters with distinct length L and diameter D are realized by controlling the assisted growth of porous anodic aluminum oxide (AAO) templates. Field-emission measurement revealed that these field emitters exhibited controllable turn-on field E(to) and the field enhancement factor beta. Sample with feature size of L = 500 nm and D = 80 nm was prepared and then used as a basis for examining the size effect. Lower E(to) and higher beta were observed consistently for increasing the aspect ratio LID. The enhanced properties of E(to) = 1.48 V/mu m and beta up to 6100 are achieved for L/D = 53 (L = 1600 nm and D = 30 nm). Optimal characterizing parameters of E(to) and beta will be reached while pursuing extreme L/D practically. Factors such as the geometric limit of AAO template manufacture and the filling efficiency of ZnO into AAO pores will exert influence on the size-dependent effect. (C) 2010 Elsevier B.V. All rights reserved. | en_US |
dc.language.iso | en_US | en_US |
dc.subject | Field-emission | en_US |
dc.subject | Hydrothermal | en_US |
dc.subject | Template | en_US |
dc.subject | Field enhancement factor | en_US |
dc.title | Size-dependent field-emission characteristics of ZnO nanowires grown by porous anodic aluminum oxide templates assistance | en_US |
dc.type | Article | en_US |
dc.identifier.doi | 10.1016/j.tsf.2010.04.091 | en_US |
dc.identifier.journal | THIN SOLID FILMS | en_US |
dc.citation.volume | 518 | en_US |
dc.citation.issue | 24 | en_US |
dc.citation.spage | 7283 | en_US |
dc.citation.epage | 7286 | en_US |
dc.contributor.department | 電子工程學系及電子研究所 | zh_TW |
dc.contributor.department | Department of Electronics Engineering and Institute of Electronics | en_US |
dc.identifier.wosnumber | WOS:000282915100025 | - |
dc.citation.woscount | 3 | - |
顯示於類別: | 期刊論文 |