標題: | Nonvolatile memory effect of tungsten nanocrystals under oxygen plasma treatments |
作者: | Chen, Shih-Cheng Chang, Ting-Chang Chen, Wei-Ren Lo, Yuan-Chun Wu, Kai-Ting Sze, S. M. Chen, Jason Liao, I. H. Yeh(Huang), Fon-Shan 電子工程學系及電子研究所 Department of Electronics Engineering and Institute of Electronics |
關鍵字: | Nonvolatile;Nanocrystals;Memory;Oxygen;Plasma |
公開日期: | 1-十月-2010 |
摘要: | In this work, an oxygen plasma treatment was used to improve the memory effect of nonvolatile W nanocrystal memory, including memory window, retention and endurance. To investigate the role of the oxygen plasma treatment in charge storage characteristics, the X-ray photon-emission spectra (XPS) were performed to analyze the variation of chemical composition for W nanocrystal embedded oxide both with and without the oxygen plasma treatment. In addition, the transmission electron microscopy (TEM) analyses were also used to identify the microstructure in the thin film and the size and density of W nanocrystals. The device with the oxygen plasma treatment shows a significant improvement of charge storage effect, because the oxygen plasma treatment enhanced the quality of silicon oxide surrounding the W nanocrystals. Therefore, the data retention and endurance characteristics were also improved by the passivation. (C) 2010 Elsevier B.V. All rights reserved. |
URI: | http://dx.doi.org/10.1016/j.tsf.2010.04.107 http://hdl.handle.net/11536/32121 |
ISSN: | 0040-6090 |
DOI: | 10.1016/j.tsf.2010.04.107 |
期刊: | THIN SOLID FILMS |
Volume: | 518 |
Issue: | 24 |
起始頁: | 7339 |
結束頁: | 7342 |
顯示於類別: | 期刊論文 |