Ni silicide formation on epitaxial Si(1-y)C(y)/(001) layers

doi:10.1016/j.tsf.2010.05.015

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DC Field	Value	Language
dc.contributor.author	Lee, S. W.	en_US
dc.contributor.author	Huang, S. H.	en_US
dc.contributor.author	Cheng, S. L.	en_US
dc.contributor.author	Chen, P. S.	en_US
dc.contributor.author	Wu, W. W.	en_US
dc.date.accessioned	2014-12-08T15:48:11Z	-
dc.date.available	2014-12-08T15:48:11Z	-
dc.date.issued	2010-10-01	en_US
dc.identifier.issn	0040-6090	en_US
dc.identifier.uri	http://dx.doi.org/10.1016/j.tsf.2010.05.015	en_US
dc.identifier.uri	http://hdl.handle.net/11536/32123	-
dc.description.abstract	The formation of Ni silicides on Si(1 - y)C(y) (y=0.01 and 0.018) epilayers grown on Si(001) has been investigated. The presence of C atoms was found to significantly retard the growth kinetics of NiSi and enhances the thermal stability of thin NiSi films. For Ni(11 nm)/Si(0.982)C(0.018) samples, the process window of NiSi was shifted and extended to 450-700 degrees C. Moreover, there was an additional strain introduced into the Si(1 - y)C(y) epilayers during Ni silicidation. This work shows the potential of Ni silicidation on Si(1y)C(y) for device applications. (C) 2010 Elsevier B.V. All rights reserved.	en_US
dc.language.iso	en_US	en_US
dc.title	Ni silicide formation on epitaxial Si(1-y)C(y)/(001) layers	en_US
dc.type	Article	en_US
dc.identifier.doi	10.1016/j.tsf.2010.05.015	en_US
dc.identifier.journal	THIN SOLID FILMS	en_US
dc.citation.volume	518	en_US
dc.citation.issue	24	en_US
dc.citation.spage	7394	en_US
dc.citation.epage	7397	en_US
dc.contributor.department	材料科學與工程學系	zh_TW
dc.contributor.department	Department of Materials Science and Engineering	en_US
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