Low temperature Ni-nanocrystals-assisted hybrid polycrystalline silicon thin film transistor for non-volatile memory applications

doi:10.1016/j.tsf.2010.05.010

完整後設資料紀錄

DC 欄位	值	語言
dc.contributor.author	Wang, Terry Tai-Jui	en_US
dc.contributor.author	Ma, William Cheng-Yu	en_US
dc.contributor.author	Hung, Shih-Wei	en_US
dc.contributor.author	Kuo, Cheng-Tzu	en_US
dc.date.accessioned	2014-12-08T15:48:11Z	-
dc.date.available	2014-12-08T15:48:11Z	-
dc.date.issued	2010-10-01	en_US
dc.identifier.issn	0040-6090	en_US
dc.identifier.uri	http://dx.doi.org/10.1016/j.tsf.2010.05.010	en_US
dc.identifier.uri	http://hdl.handle.net/11536/32125	-
dc.description.abstract	The nickel-nanocrystals (Ni-NCs)-embedded silicon nitride acting as a trapping layer has been successfully demonstrated to manipulate the charging and discharging of electrons in a thin film transistor (TFT) for nonvolatile memory (NVM) applications. Regarding device performance, with and without Ni-NCs in the stack and under a programming/erasing condition of +/-18 V for 1 s, a better threshold voltage shift of 3.2 V can be reached compared to a shift of 2.0 V for a stack without Ni-NCs. The shift is an index representing the value required to differentiate "0" or "1" states during operation. In this case, the diameter range and number density of Ni-NCs are 5-13 nm and 5.3 x 10(11) cm(-2), respectively. (C) 2010 Elsevier B.V. All rights reserved.	en_US
dc.language.iso	en_US	en_US
dc.subject	Thin film transistor (TFT)	en_US
dc.subject	Non-volatile memory (NVM)	en_US
dc.subject	Nickel-nanocrystals (Ni-NCs)	en_US
dc.title	Low temperature Ni-nanocrystals-assisted hybrid polycrystalline silicon thin film transistor for non-volatile memory applications	en_US
dc.type	Article	en_US
dc.identifier.doi	10.1016/j.tsf.2010.05.010	en_US
dc.identifier.journal	THIN SOLID FILMS	en_US
dc.citation.volume	518	en_US
dc.citation.issue	24	en_US
dc.citation.spage	7429	en_US
dc.citation.epage	7432	en_US
dc.contributor.department	材料科學與工程學系	zh_TW
dc.contributor.department	電子工程學系及電子研究所	zh_TW
dc.contributor.department	Department of Materials Science and Engineering	en_US
dc.contributor.department	Department of Electronics Engineering and Institute of Electronics	en_US
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