標題: Effect of ultraviolet light exposure on a HfO(x) RRAM device
作者: Liu, Kou-Chen
Tzeng, Wen-Hsien
Chang, Kow-Ming
Chan, Yi-Chun
Kuo, Chun-Chih
電子工程學系及電子研究所
Department of Electronics Engineering and Institute of Electronics
公開日期: 1-Oct-2010
摘要: This paper studies the effect of ultraviolet (UV) light exposure on the resistive switching characteristics of an ITO/HfO(x)/TiN structure. Unstable and unreliable switching properties are generally observed on the ITO/HfO(x)/TiN sample. Under the appropriate exposure time, the samples were able to achieve the superior electrical characteristics and reduced resistance dispersion. We suggest that the improvement of switching characteristics and resistance dispersion is related to the oxygen-rich HfO(2) layer formed at the M/O interface caused by UV light. This indicates that UV laser exposure is a critical issue in the electrical characteristics of RRAM devices. (C) 2010 Elsevier B.V. All rights reserved.
URI: http://dx.doi.org/10.1016/j.tsf.2010.05.024
http://hdl.handle.net/11536/32126
ISSN: 0040-6090
DOI: 10.1016/j.tsf.2010.05.024
期刊: THIN SOLID FILMS
Volume: 518
Issue: 24
起始頁: 7460
結束頁: 7463
Appears in Collections:Articles