標題: The Zero-Temperature-Coefficient Point Modeling of DTMOS in CMOS Integration
作者: Wang, Kuan-Ti
Lin, Wan-Chyi
Chao, Tien-Sheng
電子物理學系
Department of Electrophysics
關鍵字: DTMOS;modeling;strain;zero temperature coefficient (ZTC)
公開日期: 1-十月-2010
摘要: For the first time, analytical expressions of zero-temperature-coefficient (ZTC) point modeling of DTMOS transistor are successfully presented in detail. New analytical formulations for the linear and saturation regions of DTMOS transistor operation that make certain the drive current to be temperature independent for the ideal gate voltage are developed. The maximum errors of 0.87% and 2.35% in the linear and saturation regions, respectively, confirm a good agreement between our DTMOS ZTC point model and the experimental data. Compared to conventional MOSFET, the lower V(g) (ZTC) with higher overdrive current of DTMOS improves the integrated circuit speed and efficiency for the low-power-consumption concept in green CMOS technology.
URI: http://dx.doi.org/10.1109/LED.2010.2057404
http://hdl.handle.net/11536/32138
ISSN: 0741-3106
DOI: 10.1109/LED.2010.2057404
期刊: IEEE ELECTRON DEVICE LETTERS
Volume: 31
Issue: 10
起始頁: 1071
結束頁: 1073
顯示於類別:期刊論文


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