標題: | Impacts of Multiple Strain-Gate Engineering on a Zero-Temperature-Coefficient Point |
作者: | Chang, Tien-Shun Lu, Tsung Yi Chao, Tien-Sheng 交大名義發表 National Chiao Tung University |
關鍵字: | Mobility;nMOSFETs;strain;temperature;zero-temperature-coefficient (ZTC) point |
公開日期: | 1-四月-2013 |
摘要: | The impacts of zero-temperature-coefficient (ZTC) points of various strained devices is presented in this letter. The current and mobility are reduced at high temperature by phonon scattering. The degree of mobility reduction becomes severe on devices with multiple strain-gate engineering. The reduction of mobility becomes severe as a result of impurity scattering, which results from gate implantation impurities. The ZTC point is decreased by multiple strain-gate engineering due to the decreased Vth. |
URI: | http://dx.doi.org/10.1109/LED.2013.2247736 http://hdl.handle.net/11536/21711 |
ISSN: | 0741-3106 |
DOI: | 10.1109/LED.2013.2247736 |
期刊: | IEEE ELECTRON DEVICE LETTERS |
Volume: | 34 |
Issue: | 4 |
起始頁: | 481 |
結束頁: | 483 |
顯示於類別: | 期刊論文 |