標題: Impacts of Multiple Strain-Gate Engineering on a Zero-Temperature-Coefficient Point
作者: Chang, Tien-Shun
Lu, Tsung Yi
Chao, Tien-Sheng
交大名義發表
National Chiao Tung University
關鍵字: Mobility;nMOSFETs;strain;temperature;zero-temperature-coefficient (ZTC) point
公開日期: 1-四月-2013
摘要: The impacts of zero-temperature-coefficient (ZTC) points of various strained devices is presented in this letter. The current and mobility are reduced at high temperature by phonon scattering. The degree of mobility reduction becomes severe on devices with multiple strain-gate engineering. The reduction of mobility becomes severe as a result of impurity scattering, which results from gate implantation impurities. The ZTC point is decreased by multiple strain-gate engineering due to the decreased Vth.
URI: http://dx.doi.org/10.1109/LED.2013.2247736
http://hdl.handle.net/11536/21711
ISSN: 0741-3106
DOI: 10.1109/LED.2013.2247736
期刊: IEEE ELECTRON DEVICE LETTERS
Volume: 34
Issue: 4
起始頁: 481
結束頁: 483
顯示於類別:期刊論文


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