Impacts of Multiple Strain-Gate Engineering on a Zero-Temperature-Coefficient Point

doi:10.1109/LED.2013.2247736

完整後設資料紀錄

DC 欄位	值	語言
dc.contributor.author	Chang, Tien-Shun	en_US
dc.contributor.author	Lu, Tsung Yi	en_US
dc.contributor.author	Chao, Tien-Sheng	en_US
dc.date.accessioned	2014-12-08T15:30:21Z	-
dc.date.available	2014-12-08T15:30:21Z	-
dc.date.issued	2013-04-01	en_US
dc.identifier.issn	0741-3106	en_US
dc.identifier.uri	http://dx.doi.org/10.1109/LED.2013.2247736	en_US
dc.identifier.uri	http://hdl.handle.net/11536/21711	-
dc.description.abstract	The impacts of zero-temperature-coefficient (ZTC) points of various strained devices is presented in this letter. The current and mobility are reduced at high temperature by phonon scattering. The degree of mobility reduction becomes severe on devices with multiple strain-gate engineering. The reduction of mobility becomes severe as a result of impurity scattering, which results from gate implantation impurities. The ZTC point is decreased by multiple strain-gate engineering due to the decreased Vth.	en_US
dc.language.iso	en_US	en_US
dc.subject	Mobility	en_US
dc.subject	nMOSFETs	en_US
dc.subject	strain	en_US
dc.subject	temperature	en_US
dc.subject	zero-temperature-coefficient (ZTC) point	en_US
dc.title	Impacts of Multiple Strain-Gate Engineering on a Zero-Temperature-Coefficient Point	en_US
dc.type	Article	en_US
dc.identifier.doi	10.1109/LED.2013.2247736	en_US
dc.identifier.journal	IEEE ELECTRON DEVICE LETTERS	en_US
dc.citation.volume	34	en_US
dc.citation.issue	4	en_US
dc.citation.spage	481	en_US
dc.citation.epage	483	en_US
dc.contributor.department	交大名義發表	zh_TW
dc.contributor.department	National Chiao Tung University	en_US
dc.identifier.wosnumber	WOS:000316813100002	-
dc.citation.woscount	1	-
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