標題: Light Extraction Efficiency Enhancement of GaN-Based Light Emitting Diodes on n-GaN Layer Using a SiO(2) Photonic Quasi-Crystal Overgrowth
作者: Huang, H. W.
Lee, K. Y.
Huang, J. K.
Lin, C. H.
Lin, C. F.
Yu, C. C.
Kuo, H. C.
光電工程學系
Department of Photonics
關鍵字: GaN;Light Emitting Diodes (LEDs);Photonic Quasi-Crystal (PQC);Nano-Imprint Lithography (NIL)
公開日期: 1-Oct-2010
摘要: In this paper, GaN-based LEDs with a SiO(2) photonic quasi-crystal (PQC) pattern on an n-GaN layer by nano-imprint lithography (NIL) are fabricated and investigated. At a driving current of 20 mA on Transistor Outline (TO)-can package, the better light output power of LED III (d = 1.2 mu m) was enhanced by a factor of 1.20. After 1000 h life test (55 degrees C/50 mA) condition, Normalized output power of LED with a SiO(2) PQC pattern (LED III (d = 1.2 mu m)) on an n-GaN layer only decreased by 5%. This results offer promising potential to enhance the light output power of commercial light-emitting devices using the technique of nano-imprint lithography.
URI: http://dx.doi.org/10.1166/jnn.2010.2639
http://hdl.handle.net/11536/32165
ISSN: 1533-4880
DOI: 10.1166/jnn.2010.2639
期刊: JOURNAL OF NANOSCIENCE AND NANOTECHNOLOGY
Volume: 10
Issue: 10
起始頁: 6363
結束頁: 6368
Appears in Collections:Articles