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dc.contributor.authorLee, Weien_US
dc.contributor.authorSu, Pinen_US
dc.date.accessioned2014-12-08T15:48:17Z-
dc.date.available2014-12-08T15:48:17Z-
dc.date.issued2008en_US
dc.identifier.isbn978-1-4244-2071-1en_US
dc.identifier.urihttp://hdl.handle.net/11536/32187-
dc.language.isoen_USen_US
dc.titleA Comprehensive Study of Single-Electron Effects in Multiple-Gate MOSFETsen_US
dc.typeArticleen_US
dc.identifier.journal2008 IEEE SILICON NANOELECTRONICS WORKSHOPen_US
dc.citation.spage25en_US
dc.citation.epage26en_US
dc.contributor.department電子工程學系及電子研究所zh_TW
dc.contributor.departmentDepartment of Electronics Engineering and Institute of Electronicsen_US
dc.identifier.wosnumberWOS:000279102800013-
Appears in Collections:Conferences Paper