A Comprehensive Study of Single-Electron Effects in Multiple-Gate MOSFETs

完整後設資料紀錄

DC 欄位	值	語言
dc.contributor.author	Lee, Wei	en_US
dc.contributor.author	Su, Pin	en_US
dc.date.accessioned	2014-12-08T15:48:17Z	-
dc.date.available	2014-12-08T15:48:17Z	-
dc.date.issued	2008	en_US
dc.identifier.isbn	978-1-4244-2071-1	en_US
dc.identifier.uri	http://hdl.handle.net/11536/32187	-
dc.language.iso	en_US	en_US
dc.title	A Comprehensive Study of Single-Electron Effects in Multiple-Gate MOSFETs	en_US
dc.type	Article	en_US
dc.identifier.journal	2008 IEEE SILICON NANOELECTRONICS WORKSHOP	en_US
dc.citation.spage	25	en_US
dc.citation.epage	26	en_US
dc.contributor.department	電子工程學系及電子研究所	zh_TW
dc.contributor.department	Department of Electronics Engineering and Institute of Electronics	en_US
dc.identifier.wosnumber	WOS:000279102800013	-
顯示於類別：	會議論文