Bias-Dependent Source Injection Resistance of Modified Schottky Barrier MOSFET

Abstract

Modified Schottky Barrier MOSFET with low resistance metal source/drain and good short channel effect immunity is one of the promising nano-scale device structures. In this work, a modified external load resistance method was proposed to extract the bias dependent source injection resistance of the MSB multi-gate MOSFET. The injection resistance is exponentially proportional to (V(GS)-V(th)-0.5V(DS)) and would be close to the source/drain resistance of conventional MOSFET at high gate bias.