標題: Asymmetric Gate Capacitance and High Frequency Characteristic Fluctuations in 16 nm Bulk MOSFETs Due to Random Distribution of Discrete Dopants
作者: Li, Yiming
Hwang, Chih-Hong
Yeh, Ta-Ching
電信工程研究所
Institute of Communications Engineering
公開日期: 2008
URI: http://hdl.handle.net/11536/32220
ISBN: 978-1-4244-2071-1
期刊: 2008 IEEE SILICON NANOELECTRONICS WORKSHOP
起始頁: 99
結束頁: 100
Appears in Collections:Conferences Paper