標題: Flip-Chip-Based Multichip Module for Low Phase-Noise V-Band Frequency Generation
作者: Hsu, Li-Han
Kuylenstierna, Dan
Kozhuharov, Rumen
Gavell, Marcus
Karnfelt, Camilla
Lim, Wee-Chin
Zirath, Herbert
Chang, Edward Yi
材料科學與工程學系
Department of Materials Science and Engineering
關鍵字: Flip-chip (FC);frequency generation;interconnection;millimeter wave;monolithic microwave integrated circuit (MMIC);multichip module (MCM);multiplier;oscillator;phase noise (PN);V -band
公開日期: 1-Sep-2010
摘要: This paper reports on a flip-chip (FC)-based multichip module (MCM) for low phase-noise (PN) V -band frequency generation. A high-performance x8 GaAs metamorphic high-electron mobility transistor monolithic microwave integrated circuit (MMIC) multiplier and a low PN 7-GHz GaAs InGaP heterojunction bipolar transistor (HBT) MMIC oscillator were used in the module. The microstrip MMICs were FC bonded to an Al(2)O(3) carrier with patterns optimized for low-loss transitions. The FC-based module was experimentally characterized to have a PN of -88 dBe/Hz @ 100-kHz offset and -112 dBc/Hz @ 1-MHz offset with an output power of 11 dBm. For comparison, the MMICs were also FC bonded as individual chips and the performance was compared with the bare dies without FC bonding. It was verified that the FC bonding has no detrimental effect on the MMIC performance. The tests revealed that the FC module provided improved performance. To our best knowledge, this is the first FC-based module for millimeter-wave frequency generation. The module also presents one of the best PN reported for millimeter-wave frequency sources.
URI: http://dx.doi.org/10.1109/TMTT.2010.2057135
http://hdl.handle.net/11536/32224
ISSN: 0018-9480
DOI: 10.1109/TMTT.2010.2057135
期刊: IEEE TRANSACTIONS ON MICROWAVE THEORY AND TECHNIQUES
Volume: 58
Issue: 9
起始頁: 2408
結束頁: 2419
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