Wideband Matched CMOS LNA Design Using R-L-C Loading Network

doi:10.1007/s10762-010-9664-6

完整後設資料紀錄

DC 欄位	值	語言
dc.contributor.author	Wu, Hui-I	en_US
dc.contributor.author	Horng, Qi-Yuan	en_US
dc.contributor.author	Hu, Robert	en_US
dc.contributor.author	Jou, Christina F.	en_US
dc.date.accessioned	2014-12-08T15:48:24Z	-
dc.date.available	2014-12-08T15:48:24Z	-
dc.date.issued	2010-09-01	en_US
dc.identifier.issn	1866-6892	en_US
dc.identifier.uri	http://dx.doi.org/10.1007/s10762-010-9664-6	en_US
dc.identifier.uri	http://hdl.handle.net/11536/32245	-
dc.description.abstract	This paper proposes a new methodology for designing and analyzing wideband matched CMOS LNA with R-L-C loading network, where validity of this new approach is supported by the agreement between the simulated input impedance of the LNA and its calculated counterpart. To demonstrate its feasibility, two wideband matched LNA's are designed using TSMC 0.18-mu m RF-CMOS process. One is for 3-8 GHz application and the second one targets at 8-25 GHz frequency range. The measured results of both circuits will then be presented.	en_US
dc.language.iso	en_US	en_US
dc.subject	Wideband	en_US
dc.subject	Input matching	en_US
dc.subject	Low noise amplifier	en_US
dc.subject	LNA	en_US
dc.title	Wideband Matched CMOS LNA Design Using R-L-C Loading Network	en_US
dc.type	Article	en_US
dc.identifier.doi	10.1007/s10762-010-9664-6	en_US
dc.identifier.journal	JOURNAL OF INFRARED MILLIMETER AND TERAHERTZ WAVES	en_US
dc.citation.volume	31	en_US
dc.citation.issue	9	en_US
dc.citation.spage	1063	en_US
dc.citation.epage	1074	en_US
dc.contributor.department	電子工程學系及電子研究所	zh_TW
dc.contributor.department	電信工程研究所	zh_TW
dc.contributor.department	Department of Electronics Engineering and Institute of Electronics	en_US
dc.contributor.department	Institute of Communications Engineering	en_US
dc.identifier.wosnumber	WOS:000280571800007	-
dc.citation.woscount	0	-
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