Transient Device Simulation of Floating Gate Nonvolatile Memory Cell With a Local Trap

標題:	Transient Device Simulation of Floating Gate Nonvolatile Memory Cell With a Local Trap
作者:	Watanabe, Hiroshi 電子工程學系及電子研究所 Department of Electronics Engineering and Institute of Electronics
關鍵字:	Coulomb oscillation;device modeling;device simulation;floating gate (FG);local trap;memory;modeling;single-electron sensitivity;TCAD;trap-assisted tunneling
公開日期:	1-八月-2010
摘要:	The single-electron general-purpose device simulator is improved to carry out a wide-range transient analysis from 1 ps to 10 years. We apply this simulator to a floating gate (FG) nonvolatile memory cell in order to simulate a degradation mode of data retention owing to the direct tunneling enhanced by the fixed charge stored by a local trap in an interpoly dielectric. The scaling impact of ideal high-K interpoly dielectric FG nonvolatile memory cell is also investigated.
URI:	http://dx.doi.org/10.1109/TED.2010.2051248 http://hdl.handle.net/11536/32336
ISSN:	0018-9383
DOI:	10.1109/TED.2010.2051248
期刊:	IEEE TRANSACTIONS ON ELECTRON DEVICES
Volume:	57
Issue:	8
起始頁:	1873
結束頁:	1882
顯示於類別：	期刊論文

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