標題: Interfacial reactions of Pd/Si0.76Ge0.24 by pulsed KrF laser annealing
作者: Chen, DR
Luo, JS
Lin, WT
Chang, CY
Shih, PS
電子工程學系及電子研究所
Department of Electronics Engineering and Institute of Electronics
公開日期: 7-九月-1998
摘要: The interfacial reactions of Pd/Si0.76Ge0.24 were studied by pulsed KrF laser annealing as a function of energy density and pulse number. At an energy density of 0.1-0.4 J/cm(2), a continuous germanosilicide layer composed of a low-temperature phase, Pd-2(Si1-xGex), and a high-temperature phase, Pd(Si1-xGex), was formed. Incontrast to vacuum annealing, Ge segregation out of the germanosilicide layer and the strain relaxation of the residual Si0.76Ge0.24 film could be effectively suppressed by pulsed KrF laser annealing at 0.1 J/cm(2). Multiple pulse annealing at 0.1 J/cm(2) could further homogenize the Pd concentration of the germanosilicide layer and promote the growth of Pd(Si1-xGex). Concurrently, the smoothness of the germanosilicide layer was substantially improved in comparison with those grown by vacuum annealing at temperatures above 200 degrees C. The studies also revealed that for multiple pulse annealing at 0.1 J/cm(2) with a low repetition rate, 1 Hz, the evolution of phase formation and Pd diffusion could be proceeded by each individual laser pulse. (C) 1998 American Institute of Physics. [S0003-6951(98)04136-9].
URI: http://dx.doi.org/10.1063/1.122161
http://hdl.handle.net/11536/32392
ISSN: 0003-6951
DOI: 10.1063/1.122161
期刊: APPLIED PHYSICS LETTERS
Volume: 73
Issue: 10
起始頁: 1355
結束頁: 1357
顯示於類別:期刊論文