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dc.contributor.authorChang, HHen_US
dc.contributor.authorKer, MDen_US
dc.date.accessioned2014-12-08T15:48:43Z-
dc.date.available2014-12-08T15:48:43Z-
dc.date.issued1998-09-01en_US
dc.identifier.issn0018-9383en_US
dc.identifier.urihttp://dx.doi.org/10.1109/16.711378en_US
dc.identifier.urihttp://hdl.handle.net/11536/32400-
dc.description.abstractA dynamic gate Boating design is proposed to improve ESD robustness of the CMOS output buffers with small drive capability. By using this novel design, the human-body-model (machine-model) ESD failure threshold of a 2-mA CMOS output buffer has been practically improved from 1 KV (100 V) to greater than 8 KV (1500 V) in a 0.35-mu m CMOS process.en_US
dc.language.isoen_USen_US
dc.subjectESDen_US
dc.subjectESD protectionen_US
dc.subjectoutput bufferen_US
dc.titleImproved output ESD protection by dynamic gate floating designen_US
dc.typeArticleen_US
dc.identifier.doi10.1109/16.711378en_US
dc.identifier.journalIEEE TRANSACTIONS ON ELECTRON DEVICESen_US
dc.citation.volume45en_US
dc.citation.issue9en_US
dc.citation.spage2076en_US
dc.citation.epage2078en_US
dc.contributor.department電子工程學系及電子研究所zh_TW
dc.contributor.departmentDepartment of Electronics Engineering and Institute of Electronicsen_US
dc.identifier.wosnumberWOS:000075486100031-
dc.citation.woscount5-
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