A novel process to form cobalt silicided p(+) poly-Si gates by BF2+ implantation into bilayered CoSi/a-Si films and subsequent anneal

doi:10.1109/55.701436

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DC 欄位	值	語言
dc.contributor.author	Lai, WK	en_US
dc.contributor.author	Liu, HW	en_US
dc.contributor.author	Juang, MH	en_US
dc.contributor.author	Chen, NC	en_US
dc.contributor.author	Cheng, HC	en_US
dc.date.accessioned	2014-12-08T15:48:55Z	-
dc.date.available	2014-12-08T15:48:55Z	-
dc.date.issued	1998-07-01	en_US
dc.identifier.issn	0741-3106	en_US
dc.identifier.uri	http://dx.doi.org/10.1109/55.701436	en_US
dc.identifier.uri	http://hdl.handle.net/11536/32534	-
dc.description.abstract	A novel process that implants BF2+ ions into thin bilayered CoSi/a-Si films has been shown to form cobalt silicided pf poly-Si gates with excellent gate oxide integrity and very small flatband shift. The effects of not only using the CoSi layer as an implantation barrier but also keeping the a-Si underlayer during the initial silicide formation both significantly suppress the boron penetration through thin gate oxide.	en_US
dc.language.iso	en_US	en_US
dc.title	A novel process to form cobalt silicided p(+) poly-Si gates by BF2+ implantation into bilayered CoSi/a-Si films and subsequent anneal	en_US
dc.type	Article	en_US
dc.identifier.doi	10.1109/55.701436	en_US
dc.identifier.journal	IEEE ELECTRON DEVICE LETTERS	en_US
dc.citation.volume	19	en_US
dc.citation.issue	7	en_US
dc.citation.spage	259	en_US
dc.citation.epage	261	en_US
dc.contributor.department	電子工程學系及電子研究所	zh_TW
dc.contributor.department	Department of Electronics Engineering and Institute of Electronics	en_US
dc.identifier.wosnumber	WOS:000074366900016	-
dc.citation.woscount	3	-
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