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dc.contributor.authorTsai, Wen-Cheen_US
dc.contributor.authorLin, Hsuanen_US
dc.contributor.authorKe, Wen-Chenen_US
dc.contributor.authorChang, Wen-Haoen_US
dc.contributor.authorChou, Wu-Chingen_US
dc.contributor.authorChen, Wei-Kuoen_US
dc.contributor.authorLee, Ming-Chihen_US
dc.date.accessioned2014-12-08T15:48:57Z-
dc.date.available2014-12-08T15:48:57Z-
dc.date.issued2008en_US
dc.identifier.issn1610-1634en_US
dc.identifier.urihttp://hdl.handle.net/11536/32553-
dc.identifier.urihttp://dx.doi.org/10.1002/pssc.200778594en_US
dc.description.abstractIndium-rich InxGa1-xN islands (x >= 0.87) grown by metalor-ganic chemical vapor deposition at growth temperatures ranging from 550-750 degrees C were investigated. With the increasing growth temperature, the InGaN dot size increases while the dot density decreases due to the enhanced surface migration of In/Ga adatoms at elevated temperatures. In addition, the compositiom of InGaN-islands was also found to be varied with the growth temperature. At lower growth temperatures, a higher Ga content can be achieved due to the relatively lower migration ability of Ga adatoms. At higher growth temperatures, the deposited InGaN material tend to decompose into In-rich islands and a thin Ga-rich layer, Photoluminescence investigations show that these In-rich islands exhibit a near-infrared emission band . For samples grown at higher temperatures a visible emission band was also observed. The visible emission band may arise from defect hands introduced during the formation of Ga-rich InGaN layer. (c) 2008 WILEY-VCH Veriag GmbH & Co. KGaA, Weinheim.en_US
dc.language.isoen_USen_US
dc.titleStructural and optical properties of indium-rich InGaN islandsen_US
dc.typeProceedings Paperen_US
dc.identifier.doi10.1002/pssc.200778594en_US
dc.identifier.journalPHYSICA STATUS SOLIDI C - CURRENT TOPICS IN SOLID STATE PHYSICS, VOL 5, NO 6en_US
dc.citation.volume5en_US
dc.citation.issue6en_US
dc.citation.spage1702en_US
dc.citation.epage1705en_US
dc.contributor.department電子物理學系zh_TW
dc.contributor.departmentDepartment of Electrophysicsen_US
dc.identifier.wosnumberWOS:000256695700067-
Appears in Collections:Conferences Paper


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