標題: Structural and optical properties of indium-rich InGaN islands
作者: Tsai, Wen-Che
Lin, Hsuan
Ke, Wen-Chen
Chang, Wen-Hao
Chou, Wu-Ching
Chen, Wei-Kuo
Lee, Ming-Chih
電子物理學系
Department of Electrophysics
公開日期: 2008
摘要: Indium-rich InxGa1-xN islands (x >= 0.87) grown by metalor-ganic chemical vapor deposition at growth temperatures ranging from 550-750 degrees C were investigated. With the increasing growth temperature, the InGaN dot size increases while the dot density decreases due to the enhanced surface migration of In/Ga adatoms at elevated temperatures. In addition, the compositiom of InGaN-islands was also found to be varied with the growth temperature. At lower growth temperatures, a higher Ga content can be achieved due to the relatively lower migration ability of Ga adatoms. At higher growth temperatures, the deposited InGaN material tend to decompose into In-rich islands and a thin Ga-rich layer, Photoluminescence investigations show that these In-rich islands exhibit a near-infrared emission band . For samples grown at higher temperatures a visible emission band was also observed. The visible emission band may arise from defect hands introduced during the formation of Ga-rich InGaN layer. (c) 2008 WILEY-VCH Veriag GmbH & Co. KGaA, Weinheim.
URI: http://hdl.handle.net/11536/32553
http://dx.doi.org/10.1002/pssc.200778594
ISSN: 1610-1634
DOI: 10.1002/pssc.200778594
期刊: PHYSICA STATUS SOLIDI C - CURRENT TOPICS IN SOLID STATE PHYSICS, VOL 5, NO 6
Volume: 5
Issue: 6
起始頁: 1702
結束頁: 1705
Appears in Collections:Conferences Paper


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