QUANTUM-WELL GEOMETRICAL EFFECTS ON 2-DIMENSIONAL ELECTRON-MOBILITY

doi:10.1016/0038-1101(92)90185-F

完整後設資料紀錄

DC 欄位	值	語言
dc.contributor.author	WANG, TH	en_US
dc.contributor.author	HSIEH, TH	en_US
dc.contributor.author	CHEN, YT	en_US
dc.date.accessioned	2014-12-08T15:04:45Z	-
dc.date.available	2014-12-08T15:04:45Z	-
dc.date.issued	1992-11-01	en_US
dc.identifier.issn	0038-1101	en_US
dc.identifier.uri	http://dx.doi.org/10.1016/0038-1101(92)90185-F	en_US
dc.identifier.uri	http://hdl.handle.net/11536/3255	-
dc.description.abstract	A Monte Carlo analysis to study the quantization effects on the low-field electron mobility in various AlGaAs/GaAs/AlGaAs quantum well structures has been performed. The influence of the electron envelop wave-function and the subband structure on the two-dimensional electron scattering rates was evaluated. Our results showed that a maximum two-dimensional electron mobility can be achieved in a quantum well structure where the energy difference between the first subband and the second subband is about two times the polar optical phonon energy.	en_US
dc.language.iso	en_US	en_US
dc.title	QUANTUM-WELL GEOMETRICAL EFFECTS ON 2-DIMENSIONAL ELECTRON-MOBILITY	en_US
dc.type	Article	en_US
dc.identifier.doi	10.1016/0038-1101(92)90185-F	en_US
dc.identifier.journal	SOLID-STATE ELECTRONICS	en_US
dc.citation.volume	35	en_US
dc.citation.issue	11	en_US
dc.citation.spage	1597	en_US
dc.citation.epage	1599	en_US
dc.contributor.department	交大名義發表	zh_TW
dc.contributor.department	電控工程研究所	zh_TW
dc.contributor.department	National Chiao Tung University	en_US
dc.contributor.department	Institute of Electrical and Control Engineering	en_US
dc.identifier.wosnumber	WOS:A1992JT08100005	-
dc.citation.woscount	0	-
顯示於類別：	期刊論文