完整後設資料紀錄
DC 欄位 | 值 | 語言 |
---|---|---|
dc.contributor.author | Hsiao, SY | en_US |
dc.contributor.author | Wu, CY | en_US |
dc.date.accessioned | 2014-12-08T15:49:00Z | - |
dc.date.available | 2014-12-08T15:49:00Z | - |
dc.date.issued | 1998-06-01 | en_US |
dc.identifier.issn | 0018-9200 | en_US |
dc.identifier.uri | http://dx.doi.org/10.1109/4.678647 | en_US |
dc.identifier.uri | http://hdl.handle.net/11536/32580 | - |
dc.description.abstract | A parallel structure for a CMOS four-quadrant analog multiplier is proposed and analyzed. By applying differential input signals to a set of combiners, the multiplication function can be implemented. Based on the proposed structure, a low-voltage high-performance CMOS four-quadrant analog multiplier is designed and fabricated by 0.8-mu m N-well double-poly-double-metal CMOS technology, Experimental results have shown that, under a single 1.2-V supply voltage, the circuit has 0.89% linearity error and 1.1% total harmonic distortion under the maximum-scale input 500-mV(P-P) at both multiplier inputs. The -3-dB bandwidth is 2.2 MHz and the dc current is 2.3 mA, By using the proposed multiplier as a mixer-core and connecting a newly designed output buffer, a CMOS RF downconversion mixer is designed and implemented by 0.5-mu m single-poly-double-metal N-well CMOS technology. The experimental results have shown that, under 3-V supply voltage and 2-dBm LO power, the mixer has -1-dB conversion gain, 2.2-GHz input bandwidth, 180- MHz output bandwidth, and 22-dB noise figure. Under the LO frequency 1.9 GHz and the total de current 21 mA, the third order input intercept point is +7.5 dBm and the input 1-dB compression point is -9 dBm. | en_US |
dc.language.iso | en_US | en_US |
dc.subject | analog multiplier | en_US |
dc.subject | low voltage | en_US |
dc.subject | RF mixer | en_US |
dc.subject | wireless communication | en_US |
dc.title | A parallel structure for CMOS four-quadrant analog multipliers and its application to a 2-GHz RF downconversion mixer | en_US |
dc.type | Article | en_US |
dc.identifier.doi | 10.1109/4.678647 | en_US |
dc.identifier.journal | IEEE JOURNAL OF SOLID-STATE CIRCUITS | en_US |
dc.citation.volume | 33 | en_US |
dc.citation.issue | 6 | en_US |
dc.citation.spage | 859 | en_US |
dc.citation.epage | 869 | en_US |
dc.contributor.department | 電子工程學系及電子研究所 | zh_TW |
dc.contributor.department | Department of Electronics Engineering and Institute of Electronics | en_US |
dc.identifier.wosnumber | WOS:000073786200004 | - |
dc.citation.woscount | 35 | - |
顯示於類別: | 期刊論文 |