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dc.contributor.authorHsiao, SYen_US
dc.contributor.authorWu, CYen_US
dc.date.accessioned2014-12-08T15:49:00Z-
dc.date.available2014-12-08T15:49:00Z-
dc.date.issued1998-06-01en_US
dc.identifier.issn0018-9200en_US
dc.identifier.urihttp://dx.doi.org/10.1109/4.678647en_US
dc.identifier.urihttp://hdl.handle.net/11536/32580-
dc.description.abstractA parallel structure for a CMOS four-quadrant analog multiplier is proposed and analyzed. By applying differential input signals to a set of combiners, the multiplication function can be implemented. Based on the proposed structure, a low-voltage high-performance CMOS four-quadrant analog multiplier is designed and fabricated by 0.8-mu m N-well double-poly-double-metal CMOS technology, Experimental results have shown that, under a single 1.2-V supply voltage, the circuit has 0.89% linearity error and 1.1% total harmonic distortion under the maximum-scale input 500-mV(P-P) at both multiplier inputs. The -3-dB bandwidth is 2.2 MHz and the dc current is 2.3 mA, By using the proposed multiplier as a mixer-core and connecting a newly designed output buffer, a CMOS RF downconversion mixer is designed and implemented by 0.5-mu m single-poly-double-metal N-well CMOS technology. The experimental results have shown that, under 3-V supply voltage and 2-dBm LO power, the mixer has -1-dB conversion gain, 2.2-GHz input bandwidth, 180- MHz output bandwidth, and 22-dB noise figure. Under the LO frequency 1.9 GHz and the total de current 21 mA, the third order input intercept point is +7.5 dBm and the input 1-dB compression point is -9 dBm.en_US
dc.language.isoen_USen_US
dc.subjectanalog multiplieren_US
dc.subjectlow voltageen_US
dc.subjectRF mixeren_US
dc.subjectwireless communicationen_US
dc.titleA parallel structure for CMOS four-quadrant analog multipliers and its application to a 2-GHz RF downconversion mixeren_US
dc.typeArticleen_US
dc.identifier.doi10.1109/4.678647en_US
dc.identifier.journalIEEE JOURNAL OF SOLID-STATE CIRCUITSen_US
dc.citation.volume33en_US
dc.citation.issue6en_US
dc.citation.spage859en_US
dc.citation.epage869en_US
dc.contributor.department電子工程學系及電子研究所zh_TW
dc.contributor.departmentDepartment of Electronics Engineering and Institute of Electronicsen_US
dc.identifier.wosnumberWOS:000073786200004-
dc.citation.woscount35-
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