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dc.contributor.authorChen, MJen_US
dc.contributor.authorHuang, HTen_US
dc.contributor.authorHou, CSen_US
dc.contributor.authorYang, KNen_US
dc.date.accessioned2014-12-08T15:49:12Z-
dc.date.available2014-12-08T15:49:12Z-
dc.date.issued1998-04-01en_US
dc.identifier.issn0741-3106en_US
dc.identifier.urihttp://dx.doi.org/10.1109/55.663538en_US
dc.identifier.urihttp://hdl.handle.net/11536/32696-
dc.description.abstractThe drain leakage current in MOSFET's in the present standard process is separated into three distinct components: the subthreshold conduction, the surface band-to-band tunneling (BTBT), and the bulk BTBT, Each of the three shows different dependencies on hack-gate bias, As a result, the hulk BTBT, increasing exponentially with increasing the magnitude of back-gate reverse bias, promptly dominates the drain leakage, Additional experiment highlights the effect of the increased hulk dopant concentrations as in next-generation scaled MOSFET's on the bulk BTBT, This sets the hulk BTBT a significant constraint to the low-voltage. low-power, high-density circuits employing the back-gate reverse bias, In the work, the measured drain leakage of interest is successfully reproduced by two-dimensional (2-D) device simulation.en_US
dc.language.isoen_USen_US
dc.titleBack-gate bias enhanced band-to-band tunneling leakage in scaled MOSFET'sen_US
dc.typeArticleen_US
dc.identifier.doi10.1109/55.663538en_US
dc.identifier.journalIEEE ELECTRON DEVICE LETTERSen_US
dc.citation.volume19en_US
dc.citation.issue4en_US
dc.citation.spage134en_US
dc.citation.epage136en_US
dc.contributor.department電子工程學系及電子研究所zh_TW
dc.contributor.departmentDepartment of Electronics Engineering and Institute of Electronicsen_US
dc.identifier.wosnumberWOS:000072567100013-
dc.citation.woscount20-
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