完整後設資料紀錄
DC 欄位 | 值 | 語言 |
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dc.contributor.author | Liou, JW | en_US |
dc.contributor.author | Chiou, BS | en_US |
dc.date.accessioned | 2014-12-08T15:49:14Z | - |
dc.date.available | 2014-12-08T15:49:14Z | - |
dc.date.issued | 1998-03-30 | en_US |
dc.identifier.issn | 0953-8984 | en_US |
dc.identifier.uri | http://dx.doi.org/10.1088/0953-8984/10/12/015 | en_US |
dc.identifier.uri | http://hdl.handle.net/11536/32718 | - |
dc.description.abstract | The dielectric tunability, which is defined as the percentage change of the permittivity under DC biasing, is over 30% for polycrystalline barium strontium titanate (BST) under a field of 5000 V cm(-1) at around the Curie peak. Various volume fractions (18%, 40%, 52%, and 64%) of BST powder are mixed with silicons rubber to obtain a multi-phase dielectric composite. The effective permittivity of the composite follows the Maxwell-Garnett relation with a shape parameter of about 14 for volume fractions below 52%. The dielectric tunabilities at 5000 V cm(-1) for the samples made with 52% and 64% powder are about 0.7% and 7.4%, respectively. The results are compared to the dielectric tunabilities obtained on the basis of series, parallel, and logarithmic models. It is suggested that the dielectric tunability is enhanced when a sample with a more continuous BST powder phase is obtained. An increase of the permittivity with a small DC field applied to the composite is attributed to the effect of polarization of the interface between the BST and silicone-rubber phases. | en_US |
dc.language.iso | en_US | en_US |
dc.title | Dielectric tunability of barium strontium titanate/silicone-rubber composite | en_US |
dc.type | Article | en_US |
dc.identifier.doi | 10.1088/0953-8984/10/12/015 | en_US |
dc.identifier.journal | JOURNAL OF PHYSICS-CONDENSED MATTER | en_US |
dc.citation.volume | 10 | en_US |
dc.citation.issue | 12 | en_US |
dc.citation.spage | 2773 | en_US |
dc.citation.epage | 2786 | en_US |
dc.contributor.department | 電子工程學系及電子研究所 | zh_TW |
dc.contributor.department | Department of Electronics Engineering and Institute of Electronics | en_US |
dc.identifier.wosnumber | WOS:000073089200015 | - |
dc.citation.woscount | 29 | - |
顯示於類別: | 期刊論文 |