Impurity-limited mobility of semiconducting thin wires in n-type gallium arsenide

Abstract

The impurity-limited mobility of semiconducting thin wins for the nonparabolic band structure of electrons in n-type gallium arsenide has been investigated by scattering from ionized impurities or from the uniform distribution of remote impurities. Results are shown that the impurity-limited mobility due to scattering from background impurities increases monotonically and slowly with increasing temperature, while the impurity-limited mobility due to scattering from remote impurities increases rapidly with temperature. It is also shown that the mobility for both types of impurities decreases with increasing wire radius. However, for scattering from remote impurities, the mobility appears slowly decreasing with the wire radius at higher temperatures. (C) 1998 American Institute of Physics. [S0021-8979(98)07903-1].