Full metadata record
DC Field | Value | Language |
---|---|---|
dc.contributor.author | Shew, BY | en_US |
dc.contributor.author | Cheng, Y | en_US |
dc.contributor.author | Shih, WP | en_US |
dc.contributor.author | Lu, M | en_US |
dc.contributor.author | Lee, WH | en_US |
dc.date.accessioned | 2014-12-08T15:49:22Z | - |
dc.date.available | 2014-12-08T15:49:22Z | - |
dc.date.issued | 1998-02-01 | en_US |
dc.identifier.issn | 0946-7076 | en_US |
dc.identifier.uri | http://hdl.handle.net/11536/32823 | - |
dc.description.abstract | The precision of transferred patterns are highly dependent on the quality of the mask in deep x-ray lithography. Many parameters, such as the critical energy of the synchrotron light, beamline optics and even the microstructure to be exposed should be considered in mask design. In this paper, the design rules and the boundary conditions for deep x-ray mask are discussed in general. The method of making a precision, multilayer mask using UV lithography technique is also described. | en_US |
dc.language.iso | en_US | en_US |
dc.title | High precision, low cost mask for deep x-ray lithography | en_US |
dc.type | Article | en_US |
dc.identifier.journal | MICROSYSTEM TECHNOLOGIES | en_US |
dc.citation.volume | 4 | en_US |
dc.citation.issue | 2 | en_US |
dc.citation.spage | 66 | en_US |
dc.citation.epage | 69 | en_US |
dc.contributor.department | 交大名義發表 | zh_TW |
dc.contributor.department | National Chiao Tung University | en_US |
Appears in Collections: | Articles |
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