THE EFFECT OF TEMPERATURE ON I-V-CHARACTERISTICS OF A-SI-H PHOTODIODE

Abstract

A 16-bit/mm, high-resolution, Schottky a-Si:H photodiode linear sensor array was fabricated, and the effect of temperature on its I-V characteristics was studied. Annealing the a-Si:H photodiodes at 200-degrees-C in air for 30 minutes lowered the dark current and improved the I(p)/I(d). Under reverse bias, the dark current increased with temperature and doubled for every 8.89-degrees-C rise, while the photocurrent showed few effects below 100-degrees-C.