標題: | THE EFFECT OF TEMPERATURE ON I-V-CHARACTERISTICS OF A-SI-H PHOTODIODE |
作者: | CHANG, KL YEH, CF 交大名義發表 電控工程研究所 National Chiao Tung University Institute of Electrical and Control Engineering |
關鍵字: | HYDROGENATED AMORPHOUS SILICON (A-SI-H);PHOTODIODE;DARK CURRENT;PHOTOCURRENT;BARRIER |
公開日期: | 1-Sep-1992 |
摘要: | A 16-bit/mm, high-resolution, Schottky a-Si:H photodiode linear sensor array was fabricated, and the effect of temperature on its I-V characteristics was studied. Annealing the a-Si:H photodiodes at 200-degrees-C in air for 30 minutes lowered the dark current and improved the I(p)/I(d). Under reverse bias, the dark current increased with temperature and doubled for every 8.89-degrees-C rise, while the photocurrent showed few effects below 100-degrees-C. |
URI: | http://hdl.handle.net/11536/3294 |
ISSN: | 0021-4922 |
期刊: | JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS |
Volume: | 31 |
Issue: | 9A |
起始頁: | L1226 |
結束頁: | L1228 |
Appears in Collections: | Articles |