標題: THE EFFECT OF TEMPERATURE ON I-V-CHARACTERISTICS OF A-SI-H PHOTODIODE
作者: CHANG, KL
YEH, CF
交大名義發表
電控工程研究所
National Chiao Tung University
Institute of Electrical and Control Engineering
關鍵字: HYDROGENATED AMORPHOUS SILICON (A-SI-H);PHOTODIODE;DARK CURRENT;PHOTOCURRENT;BARRIER
公開日期: 1-Sep-1992
摘要: A 16-bit/mm, high-resolution, Schottky a-Si:H photodiode linear sensor array was fabricated, and the effect of temperature on its I-V characteristics was studied. Annealing the a-Si:H photodiodes at 200-degrees-C in air for 30 minutes lowered the dark current and improved the I(p)/I(d). Under reverse bias, the dark current increased with temperature and doubled for every 8.89-degrees-C rise, while the photocurrent showed few effects below 100-degrees-C.
URI: http://hdl.handle.net/11536/3294
ISSN: 0021-4922
期刊: JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS
Volume: 31
Issue: 9A
起始頁: L1226
結束頁: L1228
Appears in Collections:Articles