DIFLUOROSILYLENE AS A PRECURSOR FOR THE CHEMICAL VAPOR-DEPOSITION OF TITANIUM SILICIDE

Title:	DIFLUOROSILYLENE AS A PRECURSOR FOR THE CHEMICAL VAPOR-DEPOSITION OF TITANIUM SILICIDE
Authors:	CHEN, CC YU, JL LEE, CY LIU, CS CHIU, HT 應用化學系 Department of Applied Chemistry
Keywords:	CHEMICAL VAPOR DEPOSITION;TITANIUM SILICIDE;THIN FILM
Issue Date:	1-Sep-1992
Abstract:	A new method for preparing thin films of titanium silicide, TiSi2, by chemical vapour deposition of difluorosilylene and titanium tetrachloride is reported.
URI:	http://hdl.handle.net/11536/3309
ISSN:	0959-9428
Journal:	JOURNAL OF MATERIALS CHEMISTRY
Volume:	2
Issue:	9
Begin Page:	983
End Page:	984
Appears in Collections:	Articles

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APA	CHEN, C., YU, J., LEE, C., LIU, C., & CHIU, H. (1992). DIFLUOROSILYLENE AS A PRECURSOR FOR THE CHEMICAL VAPOR-DEPOSITION OF TITANIUM SILICIDE. WOS:A1992JN40600015.
Bibtex	@article{CHEN1992DIFLUOROSILYLENE, title={DIFLUOROSILYLENE AS A PRECURSOR FOR THE CHEMICAL VAPOR-DEPOSITION OF TITANIUM SILICIDE}, author={CHEN, CC and YU, JL and LEE, CY and LIU, CS and CHIU, HT}, journal={WOS:A1992JN40600015}, year={1992}, url={https://ir.lib.nycu.edu.tw/handle/11536/3309}, }