PHOTOREFLECTION STUDY ON THE SURFACE ELECTRIC-FIELD OF DELTA-DOPED GAAS GROWN BY MOLECULAR-BEAM EPITAXY

完整後設資料紀錄

DC 欄位	值	語言
dc.contributor.author	LIU, DG	en_US
dc.contributor.author	CHANG, KH	en_US
dc.contributor.author	LEE, CP	en_US
dc.contributor.author	HSU, TM	en_US
dc.contributor.author	TIEN, YC	en_US
dc.date.accessioned	2014-12-08T15:04:49Z	-
dc.date.available	2014-12-08T15:04:49Z	-
dc.date.issued	1992-08-15	en_US
dc.identifier.issn	0021-8979	en_US
dc.identifier.uri	http://dx.doi.org/10.1063/1.351710	en_US
dc.identifier.uri	http://hdl.handle.net/11536/3317	-
dc.description.abstract	Photoreflectance spectroscopy has been used to study the surface electric-field strength and the surface potential of delta-doped GaAs. Franz-Keldysh oscillations in the reflectance spectra were clearly observed and the oscillation periods were used to calculate the internal electric fields of the delta-doped samples. Based on the measured results and the self-consistent calculation, a surface potential of 0.6 eV is obtained.	en_US
dc.language.iso	en_US	en_US
dc.title	PHOTOREFLECTION STUDY ON THE SURFACE ELECTRIC-FIELD OF DELTA-DOPED GAAS GROWN BY MOLECULAR-BEAM EPITAXY	en_US
dc.type	Article	en_US
dc.identifier.doi	10.1063/1.351710	en_US
dc.identifier.journal	JOURNAL OF APPLIED PHYSICS	en_US
dc.citation.volume	72	en_US
dc.citation.issue	4	en_US
dc.citation.spage	1468	en_US
dc.citation.epage	1472	en_US
dc.contributor.department	電控工程研究所	zh_TW
dc.contributor.department	Institute of Electrical and Control Engineering	en_US
dc.identifier.wosnumber	WOS:A1992JJ22600040	-
dc.citation.woscount	11	-
顯示於類別：	期刊論文